Datasheet > L2SA1774T1

L2SA1774T1

更新时间： 2024-10-28 11:36:27

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
3页	205K
描述
General Purpose Transistors PNP Silicon

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数据手册

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L2SA1774T1 数据手册

LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

PNP Silicon

COLLECTOR

L2SA1774*T1

BASE

EMITTER

SC-89

!Absolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

Limits

Unit

VCBO

VCEO

VEBO

−60

−50

−6

−0.15

A (DC)

Collector power

dissipation

0.15

150

˚C

Junction temperature

Storage temperature

Tstg

−

55~+150

!Electrical characteristics (Ta=25°C)

Parameter

Symbol Min.

Typ. Max.

Unit

Conditions

Collector-base breakdown voltage

BV^CBO

−60

−50

−6

−

−50µA

−1µA

Collector-emitter breakdown voltage BVCEO

Emitter-base breakdown voltage

Collector cutoff current

BVEBO

−

−50µA

CBO

EBO

CE(sat)

−

−0.1

−0.5

560

−

µA

−60V

Emitter cutoff current

−

−6V

Collector-emitter saturation voltage

DC current transfer ratio

Transition frequency

−

C/I

−50mA/−5mA

120

−

−6V, I −1mA

140

4.0

MHz

−12V, I

2mA, f

30MHz

Output capacitance

Cob

−

5.0

0A, f=1MHz

!Device marking

L2SA1774QT1=FQ L2SA1774ST1=FS L2SA1774RT1=FR

h^FEvalues are classified as follows:

Item

hFE

120~270

180~390

270~560

L2SA1774*T1-1/3

12 3

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