Datasheet > L2SA1577RT1G

L2SA1577RT1G

更新时间： 2024-10-29 01:05:07

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
3页	187K
描述
General Purpose Transistors PNP Silicon

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技术参数
数据手册

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L2SA1577RT1G 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.74	最大集电极电流 (IC)：	0.5 A
配置：	Single	最小直流电流增益 (hFE)：	180
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.15 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

L2SA1577RT1G 数据手册

LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

PNP Silicon

We declare that the material of product compliance with RoHS requirements.

L2SA1577QT1G Series

ORDERING INFORMATION

Shipping

Device

Package

SC-70

3000/Tape & Reel

10000/Tape & Reel

L2SA1577QT1G Series

L2SA1577QT3G Series

SC-70

SC-70/SOT– 323

F Absolute maximum ratings (Ta = 25_C)

COLLECTOR

BASE

EMITTER

DEVICE MARKING

L2SA1577PT1G =HP L2SA1577QT1G=HQ L2SA1577RT1G =HR

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

Collector–Emitter Breakdown Voltage

(I_C= –1 mA)

V _(BR)CEO

– 32

—

Emitter–Base Breakdown Voltage

(I_E= – 100 µA)

Collector–Base Breakdown Voltage

(I_C= – 100 µA)

Collector Cutoff Current

(V_CB= – 20 V)

V _(BR)EBO

V _(BR)CBO

I _CBO

– 5

– 40

—

– 1

µA

Emitter cutoff current

I _EBO

—

= – 4 V)

(V_EB

Collector-emitter saturation voltage

(I_C/ I_B= – 100 mA / – 10m A)

DC current transfer ratio

V _CE(sat)

h _FE

—

-0.4

390

––

(V _CE= – 3 V, I _C= –10mA)

Transition frequency

f _T

—

200

7.0

––

—

MHz

(V _CE= – 5 V, I _E= 20mA, f=100MHz )

Output capacitance

C _ob

(V _CB= – 10 V, I _E= 0A, f =1MHz )

h_FEvalues are classified as follows:

120~270

hFE

82~270

180~390

Rev.O 1/3

12 3

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