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L2SA1576AQT1G PDF预览

L2SA1576AQT1G

更新时间: 2024-10-29 01:17:35
品牌 Logo 应用领域
乐山 - LRC /
页数 文件大小 规格书
4页 120K
描述
General Purpose Transistors PNP Silicon

L2SA1576AQT1G 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:unknown
风险等级:5.69最大集电极电流 (IC):0.15 A
配置:Single最小直流电流增益 (hFE):120
最高工作温度:150 °C极性/信道类型:PNP
最大功率耗散 (Abs):0.2 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

L2SA1576AQT1G 数据手册

 浏览型号L2SA1576AQT1G的Datasheet PDF文件第2页浏览型号L2SA1576AQT1G的Datasheet PDF文件第3页浏览型号L2SA1576AQT1G的Datasheet PDF文件第4页 
LESHAN RADIO COMPANY, LTD.  
General Purpose Transistors  
PNP Silicon  
z We declare that the material of product compliance with RoHS requirements.  
L2SA1576AQT1G Series  
ORDERING INFORMATION  
3
Shipping  
Device  
Package  
SC-70  
1
3000/Tape & Reel  
10000/Tape & Reel  
L2SA1576AQLT1G Series  
L2SA1576AQLT3G Series  
2
SC-70  
SC-70/SOT– 323  
MAXIMUM RATINGS  
3
Rating  
Symbol  
V CEO  
V CBO  
V EBO  
I C  
Value  
Unit  
V
COLLECTOR  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current — Continuous  
Collector power dissipation  
Junction temperature  
Storage temperature  
–50  
–60  
1
V
BASE  
–6.0  
–150  
0.15  
150  
V
2
mAdc  
W
EMITTER  
P C  
T j  
°C  
T stg  
-55  
~+150  
°C  
DEVICE MARKING  
L2SA1576AQT1G =FQ L2SA1576ART1G=FR L2SA1576AST1G =FS  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Collector–Emitter Breakdown Voltage  
(IC = –1 mA)  
V (BR)CEO  
– 50  
V
Emitter–Base Breakdown Voltage  
(IE = – 50 µA)  
Collector–Base Breakdown Voltage  
(IC = – 50 µA)  
Collector Cutoff Current  
(VCB = – 60 V)  
V (BR)EBO  
V (BR)CBO  
I CBO  
– 6  
– 60  
V
V
– 0.1  
– 0.1  
µA  
µA  
Emitter cutoff current  
I EBO  
(VEB = – 6 V)  
Collector-emitter saturation voltage  
(IC/ IB = – 50 mA / – 5m A)  
DC current transfer ratio  
(V CE = – 6 V, I C= –1mA)  
Transition frequency  
V CE(sat)  
h FE  
-0.5  
560  
V
120  
––  
––  
f T  
140  
4.0  
––  
MHz  
pF  
(V CE = – 12 V, I E= 2mA, f=30MHz )  
Output capacitance  
C ob  
5.0  
(V CB = – 12 V, I E= 0A, f =1MHz )  
h FE values are classified as follows:  
Q
R
S
*
hFE  
120~270  
180~390  
270~560  
Rev.O 1/4  

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