Datasheet > L2N7003LT1

L2N7003LT1

更新时间： 2024-10-28 22:14:27

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
3页	144K
描述
Small Signal MOSFET 115 mAmps, 60 Volts

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L2N7003LT1 数据手册

LESHAN RADIO COMPANY, LTD.

Small Signal MOSFET

115 mAmps, 60 Volts

N–Channel SOT–23

L2N7002LT1

MAXIMUM RATINGS

Rating

Drain–Source Voltage

Symbol

V_DSS

Value

Unit

Vdc

CASE 318, STYLE 21

SOT– 23 (TO–236AB)

Drain–Gate Voltage (R_GS= 1.0 MΩ)

V_DGR

Vdc

Drain Current

I_D

I_DM

±ā115

±ā75

±ā800

mAdc

– Continuous T_C= 25°C (Note 1.)

– Continuous T_C= 100°C (Note 1.)

– Pulsed (Note 2.)

115 mAMPS

60 VOLTS

R _DS(on)= 7.5 W

Gate–Source Voltage

– Continuous

V_GS

V_GSM

±ā20

±ā40

Vdc

Vpk

– Non–repetitive (t ≤ 50 µs)

THERMAL CHARACTERISTICS

Characteristic

N - Channel

Symbol

Max

Unit

Total Device Dissipation FR–5 Board

(Note 3.) T_A= 25°C

P_D

225

1.8

mW/°C

Derate above 25°C

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R_θJA

P_D

556

300

°C/W

Alumina Substrate,(Note 4.) T = 25°C

Derate above 25°C

mW/°C

2.4

MARKING DIAGRAM

& PIN ASSIGNMENT

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R_θJA

417

°C/W

°C

T_J,

–ā55 to

stg

+150

Drain

1. The Power Dissipation of the package may result in a lower continuous drain

current.

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.

3. FR–5 = 1.0 x 0.75 x 0.062 in.

4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.

702

Gate

Source

702

= Device Code

= Work Week

ORDERING INFORMATION

Device

Package

Shipping

3000 Tape & Reel

2N7002LT1

2N7002LT3

SOT–23

SOT–23 10,000 Tape & Reel

L2N7002LT1–1/3

12 3

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