Datasheet > L2N7002WT1G

L2N7002WT1G

更新时间： 2024-09-25 05:41:15

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
7页	273K
描述
Small Signal MOSFET 115 mA, 60 V N-Channel SOT-323

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技术参数
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L2N7002WT1G 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.52
Is Samacsys：	N	配置：	Single
最大漏极电流 (Abs) (ID)：	0.115 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.3 W	子类别：	FET General Purpose Power
表面贴装：	YES	Base Number Matches：	1

L2N7002WT1G 数据手册

LESHAN RADIO COMPANY, LTD.

Small Signal MOSFET

115 mA, 60 V

L2N7002WT1G

N–Channel SOT–323

We declare that the material of product

compliance with RoHS requirements.

•

MAXIMUM RATINGS

SOT– 323 (SC-70)

Rating

Drain–Source Voltage

Symbol

V_DSS

Value

Unit

Vdc

Drain–Gate Voltage (R_GS= 1.0 MΩ)

V_DGR

Vdc

115 mAMPS

60 VOLTS

R _DS(on)= 7.5 W

Drain Current

I_D

I_DM

mAdc

±115

±75

±800

– Continuous T_C= 25°C (Note 1.)

– Continuous T_C= 100°C (Note 1.)

– Pulsed (Note 2.)

N - Channel

Gate–Source Voltage

– Continuous

±20

±40

V_GS

V_GSM

Vdc

Vpk

– Non–repetitive (t ≤ 50 µs)

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR–5 Board

(Note 3.) T_A= 25°C

Derate above 25°C

P_D

225

1.8

mW/°C

Thermal Resistance, Junction to Ambient

R_θJA

P_D

556

300

°C/W

MARKING DIAGRAM

& PIN ASSIGNMENT

Total Device Dissipation

mW/°C

Alumina Substrate,(Note 4.) T = 25°C

Derate above 25°C

2.4

Drain

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R_θJA

417

°C/W

°C

T_J,

–ā55 to

+150

stg

1. The Power Dissipation of the package may result in a lower continuous drain

current.

Gate

Source

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.

3. FR–5 = 1.0 x 0.75 x 0.062 in.

4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.

= Device Code

= Work Week

ORDERING INFORMATION

Device

Marking

Shipping

L2N7002WT1G

L2N7002WT3G

3000 Tape & Reel

10000 Tape & Reel

1/4

12 3 4 5 6 7

中文翻译

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