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L2N7002SWT1G PDF预览

L2N7002SWT1G

更新时间: 2024-11-14 01:21:35
品牌 Logo 应用领域
乐山 - LRC /
页数 文件大小 规格书
7页 449K
描述
Small Signal MOSFET 380 mAmps, 60 Volts

L2N7002SWT1G 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.53
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

L2N7002SWT1G 数据手册

 浏览型号L2N7002SWT1G的Datasheet PDF文件第2页浏览型号L2N7002SWT1G的Datasheet PDF文件第3页浏览型号L2N7002SWT1G的Datasheet PDF文件第4页浏览型号L2N7002SWT1G的Datasheet PDF文件第5页浏览型号L2N7002SWT1G的Datasheet PDF文件第6页浏览型号L2N7002SWT1G的Datasheet PDF文件第7页 
L2N7002SWT1G  
S-L2N7002SWT1G  
Small Signal MOSFET  
380 mAmps, 60 Volts N–Channel SC-70  
1. FEATURES  
We declare that the material of product compliance with  
RoHS requirements and Halogen Free.  
S- prefix for automotive and other applications requiring  
unique site and control change requirements; AEC-Q101  
qualified and PPAP capable.  
SC70(SOT-323)  
ESD protected  
Low RDS(on)  
2. APPLICATIONS  
Low side load switch  
Level shift circuits  
DC−DC converter  
Portable applications i.e. DSC, PDA, Cell Phone, etc.  
3. DEVICE MARKING AND ORDERING INFORMATION  
Device  
Marking  
Shipping  
L2N7002SWT1G  
L2N7002SWT3G  
701  
3000/Tape&Reel  
10000/Tape&Reel  
701  
4. MAXIMUM RATINGS(Ta = 25ºC)  
Parameter  
Symbol  
VDSS  
VGS  
Limits  
Unit  
Vdc  
Drain–Source Voltage  
Gate-Source Voltage  
Drain Current  
60  
±20  
Vdc  
ID  
mAdc  
– Steady State TA = 25°C  
TA = 85°C  
320  
230  
380  
270  
1.5  
– t<5s  
TA = 25°C  
TA = 85°C  
Pulsed Drain Current (tp=10μs)  
IDM  
IS  
A
Source Current (Body Diode)  
300  
mA  
Leshan Radio Company, LTD.  
Rev.A Dec 2016  
1/7  

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