Datasheet > L2N7002M3T5G

L2N7002M3T5G

更新时间： 2024-09-26 01:21:31

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
4页	173K
描述
Small Signal MOSFET 115 mAmps, 60 Volts

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技术参数
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L2N7002M3T5G 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.55	配置：	Single
最大漏极电流 (Abs) (ID)：	0.115 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	0.15 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

L2N7002M3T5G 数据手册

LESHAN RADIO COMPANY, LTD.

Small Signal MOSFET

115 mAmps, 60 Volts

N–Channel SOT–723

L2N7002M3T5G

S-L2N7002M3T5G

• ^{Pb−Free Package is Available.}

• ^{S- Prefix for Automotive and Other Applications Requiring}

Unique Site and Control Change Requirements; AEC-Q101

Qualified and PPAP Capable.

ORDERING INFORMATION

SOT-723

Device

Marking

Shipping

L2N7002M3T5G

S-L2N7002M3T5G

8000 Tape & Reel

N - Channel

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain–Source Voltage

Drain–Gate Voltage (R_GS= 1.0 MΩ)

V_DSS

V_DGR

Vdc

Drain Current

– Continuous T_C= 25°C (Note 1.)

– Continuous

I_D

±115

±800

mAdc

Vdc

–

I_DM

Pulse t < 10us

MARKING DIAGRAM

& PIN ASSIGNMENT

Gate–Source Voltage

– Continuous

±20

V_GS

Drain

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR–5 Board

(Note 2.) T_A= 25°C

Derate above 25°C

P_D

150

1.2

mW/°C

Gate

Source

= Device Code

= Month Code

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R_θJA

833

°C/W

°C

T_J,

stg

–55 to

+150

1. The Power Dissipation of the package may result in a lower continuous drain

current.

2. FR–5 = 1.0 x 0.75 x 0.062 in.

3. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.

Rev .O 1/4

12 3 4

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