Datasheet > L2N7002LT1G_11

L2N7002LT1G_11

更新时间： 2024-10-29 12:26:39

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
4页	151K
描述
Small Signal MOSFET 115 mAmps, 60 Volts NâChannel SOTâ23

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L2N7002LT1G_11 数据手册

LESHAN RADIO COMPANY, LTD.

Small Signal MOSFET

115 mAmps, 60 Volts

N–Channel SOT–23

L2N7002LT1G

We declare that the material of product are Halogen Free and

•

compliance with RoHS requirements.

• ^{ESD Protected:1000V}

CASE 318, STYLE 21

SOT– 23 (TO–236AB)

MAXIMUM RATINGS

Rating

Drain–Source Voltage

Symbol

V_DSS

Value

Unit

Vdc

Drain–Gate Voltage (R_GS= 1.0 MΩ)

V_DGR

Vdc

Drain Current

I_D

I_DM

mAdc

±115

±75

±800

Simplified Schematic

– Continuous T_C= 25°C (Note 1.)

– Continuous T_C= 100°C (Note 1.)

– Pulsed (Note 2.)

Gate

Gate–Source Voltage

– Continuous

±20

±40

V_GS

V_GSM

Vdc

Vpk

– Non–repetitive (t ≤ 50 µs)

Drain

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Source

Total Device Dissipation FR–5 Board

(Note 3.) T_A= 25°C

P_D

225

1.8

mW/°C

Derate above 25°C

(Top View)

Thermal Resistance, Junction to Ambient

R_θJA

P_D

556

300

°C/W

Total Device Dissipation

Alumina Substrate,(Note 4.) T = 25°C

Derate above 25°C

mW/°C

2.4

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R_θJA

417

°C/W

°C

T_J,

-55 to

+150

stg

MARKING DIAGRAM

& PIN ASSIGNMENT

1. The Power Dissipation of the package may result in a lower continuous drain

current.

Drain

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.

3. FR–5 = 1.0 x 0.75 x 0.062 in.

702

4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.

Gate

Source

ORDERING INFORMATION

Device

Marking

702

Shipping

702

= Device Code

=Month Code

L2N7002LT1G

L2N7002LT3G

3000 Tape & Reel

10000 Tape & Reel

702

Rev .O 1/4

12 3 4

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