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L2N7002LT1 PDF预览

L2N7002LT1

更新时间: 2024-10-29 11:36:27
品牌 Logo 应用领域
乐山 - LRC /
页数 文件大小 规格书
3页 70K
描述
Small Signal MOSFET 115 mAmps, 60 Volts

L2N7002LT1 数据手册

 浏览型号L2N7002LT1的Datasheet PDF文件第2页浏览型号L2N7002LT1的Datasheet PDF文件第3页 
LESHAN RADIO COMPANY, LTD.  
Small Signal MOSFET  
115 mAmps, 60 Volts  
N–Channel SOT–23  
L2N7002LT1  
3
Pb−Free Package is Available.  
1
2
CASE 318, STYLE 21  
SOT– 23 (TO–236AB)  
MAXIMUM RATINGS  
Rating  
Drain–Source Voltage  
Symbol  
VDSS  
Value  
60  
Unit  
Vdc  
Drain–Gate Voltage (RGS = 1.0 M)  
VDGR  
60  
Vdc  
115 mAMPS  
60 VOLTS  
R DS(on) = 7.5 W  
Drain Current  
ID  
ID  
IDM  
ā115  
ā75  
ā800  
mAdc  
– Continuous TC = 25°C (Note 1.)  
– Continuous TC = 100°C (Note 1.)  
– Pulsed (Note 2.)  
N - Channel  
3
Gate–Source Voltage  
– Continuous  
VGS  
VGSM  
ā20  
ā40  
Vdc  
Vpk  
– Non–repetitive (t 50 µs)  
p
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
1
Total Device Dissipation FR–5 Board  
(Note 3.) TA = 25°C  
Derate above 25°C  
PD  
225  
1.8  
mW  
mW/°C  
2
Thermal Resistance, Junction to Ambient  
RθJA  
PD  
556  
300  
°C/W  
MARKING DIAGRAM  
& PIN ASSIGNMENT  
Total Device Dissipation  
mW  
mW/°C  
Alumina Substrate,(Note 4.) T = 25°C  
A
Derate above 25°C  
2.4  
Drain  
3
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
RθJA  
417  
°C/W  
°C  
TJ,  
T
ā55 to  
+150  
stg  
702  
W
1. The Power Dissipation of the package may result in a lower continuous drain  
current.  
1
Gate  
2
Source  
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.  
3. FR–5 = 1.0 x 0.75 x 0.062 in.  
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.  
702  
W
= Device Code  
= Work Week  
ORDERING INFORMATION  
Device  
L2N7002LT1  
Marking  
Shipping  
3000 Tape & Reel  
702  
L2N7002LT1G 702(Pb-Free) 3000 Tape & Reel  
L2N7002LT1–1/3  

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