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L2N7002KN3T5G PDF预览

L2N7002KN3T5G

更新时间: 2024-10-30 01:21:31
品牌 Logo 应用领域
乐山 - LRC 开关晶体管
页数 文件大小 规格书
5页 230K
描述
Small Signal MOSFET 380 mAmps, 60 Volts

L2N7002KN3T5G 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.53外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):0.32 A最大漏源导通电阻:1.8 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PBCC-N3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
表面贴装:YES端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

L2N7002KN3T5G 数据手册

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LESHAN RADIO COMPANY, LTD.  
Small Signal MOSFET  
380 mAmps, 60 Volts  
L2N7002KN3T5G  
N–Channel SOT883  
3
Features  
ESD Protected  
Low R  
DS(on)  
1
2
Surface Mount Package  
This is a PbFree Device  
We declare that the material of product are Halogen Free and  
SOT883  
compliance with RoHS requirements.  
Applications  
Low Side Load Switch  
Level Shift Circuits  
DCDC Converter  
V
R
MAX  
I MAX  
D
(Note 1)  
(BR)DSS  
DS(on)  
Portable Applications i.e. DSC, PDA, Cell Phone, etc.  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
60 V  
1.8 W @ 10 V  
2.5 W @ 5.0 V  
380 mA  
Rating  
DraintoSource Voltage  
GatetoSource Voltage  
Symbol  
Value  
60  
Unit  
V
V
DSS  
V
GS  
20  
V
Drain Current (Note 1)  
Steady State  
I
D
mA  
T = 25°C  
A
320  
230  
A
T = 85°C  
t < 5 s  
T = 25°C  
A
380  
270  
Drain  
3
A
T = 85°C  
Power Dissipation (Note 1)  
Steady State  
P
mW  
D
250  
1.5  
I
A
Pulsed Drain Current (t = 10 ms)  
p
DM  
2
1
Gate  
Operating Junction and Storage  
Temperature Range  
T , T  
J
55 to  
+150  
°C  
STG  
Source  
Source Current (Body Diode)  
I
300  
260  
mA  
S
Lead Temperature for Soldering Purposes  
(1/8from case for 10 s)  
T
°C  
L
GateSource ESD Rating  
(HBM, Method 3015)  
ESD  
2000  
V
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
JunctiontoAmbient Steady State  
(Note 1)  
500  
°C/W  
R
q
JA  
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in  
sq [1 oz] including traces)  
ORDERING INFORMATION  
Device  
Marking  
Shipping  
L2N7002KN3T5G RK  
10000 Tape & Reel  
Rev .A 1/5  

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