Datasheet > L2N7002KDW1T3G

L2N7002KDW1T3G

更新时间： 2024-10-30 01:21:31

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
6页	602K
描述
Small Signal MOSFET380 mAmps, 60 Volts NâChannel SC-88

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L2N7002KDW1T3G 数据手册

L2N7002KDW1T1G

S-L2N7002KDW1T1G

Small Signal MOSFET

380 mAmps, 60 Volts N–Channel SC-88

1. FEATURES

●

We declare that the material of product compliance with

RoHS requirements and Halogen Free.

●

S- prefix for automotive and other applications requiring

unique site and control change requirements; AEC-Q101

qualified and PPAP capable.

SC88(SOT-363)

●

ESD Protected

2. DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

L2N7002KDW1T1G

L2N7002KDW1T3G

72K

3000/Tape&Reel

10000/Tape&Reel

72K

3. MAXIMUM RATINGS(Ta = 25ºC)

Parameter

Symbol

VDSS

VGS

Limits

Unit

Vdc

Drain–Source Voltage

Gate-Source Voltage

Drain Current

±20

Vdc

mAdc

– Steady State TA = 25°C

TA = 85°C

320

230

380

270

1.5

– t<5s

TA = 25°C

TA = 85°C

Pulsed Drain Current (tp=10μs)

IDM

Source Current (Body Diode)

300

4. THERMAL CHARACTERISTICS

Parameter

Symbol

Limits

Unit

Total Device Dissipation(Note 1)

– Steady State

300

420

– t<5s

Junction−to−Ambient(Note 1)

– Steady State

RΘJA

ºC/W

417

300

260

– t<5s

ºC

Lead Temperature for Soldering

Purposes (1/8 " from case for 10 s)

Junction and Storage temperature

TJ,Tstg −55∼+150

ESD 2000

ºC

Gate−Source ESD Rating(HBM,

Method 3015)

1. FR–5 = 1.0×0.75×0.062 in.

Leshan Radio Company, LTD.

Rev.F Mar 2016

1/6

12 3 4 5 6

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