Datasheet > L2N7002FWT1G

L2N7002FWT1G

更新时间： 2024-09-26 01:12:39

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
5页	296K
描述
Small Signal MOSFET 30 Volts

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中文翻译

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技术参数
数据手册

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L2N7002FWT1G 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.57
Is Samacsys：	N	Base Number Matches：	1

L2N7002FWT1G 数据手册

LESHAN RADIO COMPANY, LTD.

Small Signal MOSFET

L2N7002FWT1G

S-L2N7002FWT1G

30 Volts

N–Channel SC70

We declare that the material of product are Halogen Free and

•

compliance with RoHS requirements.

S- Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101

Qualified and PPAP Capable.

•

FEATURES

SC–70

● RDS(ON) ≦8Ω@VGS=4V

● RDS(ON) ≦13Ω@VGS=2.5V

● Super high density cell design for extremely low RDS(ON)

● Exceptional on-resistance and maximum DC current

capability

Simplified Schematic

● Capable doing Cu wire bonding

● ESD Protected:1000V

Gate

APPLICATIONS

Drain

● Power Management in Note book

● Portable Equipment

Source

● Battery Powered System

● Load Switch

(Top View)

ORDERING INFORMATION

Device

Marking

Shipping

L2N7002FWT1G

3000 Tape & Reel

S-L2N7002FWT1G

MARKING DIAGRAM

& PIN ASSIGNMENT

10000 Tape & Reel

L2N7002FWT3G

S-L2N7002FWT3G

Drain

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR–5 Board

(Note 1.) T_A= 25°C

P_D

225

1.8

mW/°C

Derate above 25°C

Gate

Source

Thermal Resistance, Junction to Ambient

R_θJA

P_D

556

300

°C/W

= Device Code

=Month Code

Total Device Dissipation

Alumina Substrate,(Note 2.) T = 25°C

Derate above 25°C

mW/°C

2.4

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R_θJA

417

°C/W

°C

T_J,

-55 to

+150

stg

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.

Rev .O 1/4

12 3 4 5

中文翻译

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