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L2N7002EM3T5G_15 PDF预览

L2N7002EM3T5G_15

更新时间: 2024-11-14 01:15:43
品牌 Logo 应用领域
乐山 - LRC /
页数 文件大小 规格书
4页 247K
描述
Small Signal MOSFET

L2N7002EM3T5G_15 数据手册

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LESHAN RADIO COMPANY, LTD.  
Small Signal MOSFET  
115 mAmps, 60 Volts  
N–Channel SOT–723  
L2N7002EM3T5G  
S-L2N7002EM3T5G  
3
Pb−Free Package is Available.  
ESD Protected:2000V  
S- Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC-Q101  
Qualified and PPAP Capable.  
2
1
ORDERING INFORMATION  
SOT-723  
Device  
Marking  
Shipping  
L2N7002EM3T5G  
S-L2N7002EM3T5G  
RK  
8000 Tape & Reel  
N - Channel  
MAXIMUM RATINGS  
Rating  
3
d
Symbol  
Value  
Unit  
Drain–Source Voltage  
VDSS  
60  
Vdc  
g
1
Drain Current  
– Continuous TC = 25°C (Note 1.)  
– Continuous  
ID  
±115  
±800  
mAdc  
Vdc  
IDM  
Pulse t < 10us  
s
2
Gate–Source Voltage  
– Continuous  
±20  
VGS  
MARKING DIAGRAM  
& PIN ASSIGNMENT  
THERMAL CHARACTERISTICS  
Characteristic  
Drain  
3
Symbol  
Max  
Unit  
Total Device Dissipation FR–5 Board  
(Note 2.) TA = 25°C  
PD  
150  
1.2  
mW  
mW/°C  
RK  
Derate above 25°C  
1
Gate  
2
Source  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
RθJA  
833  
°C/W  
°C  
TJ,  
T
stg  
RK  
M
= Device Code  
= Month Code  
–55 to  
+150  
1. The Power Dissipation of the package may result in a lower continuous drain  
current.  
2. FR–5 = 1.0 x 0.75 x 0.062 in.  
3. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.  
Rev .O 1/4  

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