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L1SS400GT1G PDF预览

L1SS400GT1G

更新时间: 2024-10-28 05:41:15
品牌 Logo 应用领域
乐山 - LRC 二极管开关
页数 文件大小 规格书
3页 286K
描述
Switching diode

L1SS400GT1G 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:R-PDSO-F2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.65其他特性:HIGH RELIABILITY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.2 V
JESD-30 代码:R-PDSO-F2最大非重复峰值正向电流:0.5 A
元件数量:1端子数量:2
最高工作温度:125 °C最大输出电流:0.1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.15 W最大重复峰值反向电压:90 V
最大反向恢复时间:0.004 µs子类别:Rectifier Diodes
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

L1SS400GT1G 数据手册

 浏览型号L1SS400GT1G的Datasheet PDF文件第2页浏览型号L1SS400GT1G的Datasheet PDF文件第3页 
LESHAN RADIO COMPANY, LTD.  
Switchingdiode  
L1SS400GT1G  
Applications  
High speed switching  
Features  
1
1) Extremely small surface mounting type.  
2) High Speed.  
3) High reliability.  
2
Construction  
Silicon epitaxial planar  
SOD - 723  
We declare that the material of product  
compliance with RoHS requirements.  
1
2
Device Marking  
CATHODE  
ANODE  
L1SS400GT1G=3  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
Parameter  
Symbol  
VRM  
VR  
Limits  
90  
Unit  
V
Peak reverse voltage  
DC reverse voltage  
Peak forward current  
Mean rectifying current  
Surge current (1s)  
Junction temperature  
Storage temperature  
80  
V
I FM  
225  
mA  
mA  
mA  
°C  
I O  
100  
Isurge  
Tj  
500  
125  
Tstg  
– 55 ~ +125  
°C  
ELECTRICAL CHARACTERISTICS (Ta = 25°C)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
1.2  
0.1  
3.0  
4
Unit  
Conditions  
I F=100mA  
VR=80V  
VR=0.5V , f=1MHz  
s =6V ,VIF=10mA , RL=100  
Forward voltage  
VF  
IR  
CT  
trr  
V
µA  
pF  
n
Reverse current  
Capacitance between terminals  
Reverse recovery time  
0.72  
R
ORDRING INFORMATION  
Device  
Marking  
Shipping  
3000/Tape&Reel  
10000/Tape&Reel  
L1SS400GT1G  
L1SS400GT3G  
3
3
1/3  

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