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L1SS400BST1G PDF预览

L1SS400BST1G

更新时间: 2024-10-29 01:12:43
品牌 Logo 应用领域
乐山 - LRC 二极管
页数 文件大小 规格书
3页 194K
描述
Switching Diode

L1SS400BST1G 技术参数

生命周期:Contact Manufacturer包装说明:R-PBCC-N2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.67其他特性:HIGH RELIABILITY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PBCC-N2
元件数量:1端子数量:2
最高工作温度:125 °C最大输出电流:0.1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:CHIP CARRIER最大重复峰值反向电压:90 V
最大反向恢复时间:0.004 µs表面贴装:YES
端子形式:NO LEAD端子位置:BOTTOM
Base Number Matches:1

L1SS400BST1G 数据手册

 浏览型号L1SS400BST1G的Datasheet PDF文件第2页浏览型号L1SS400BST1G的Datasheet PDF文件第3页 
L1SS400BST5G  
S-L1SS400BST5G  
Switching Diode  
1
1. FEATURES  
2
We declare that the material of product compliance with  
RoHS requirements and Halogen Free.  
S- prefix for automotive and other applications requiring  
unique site and control change requirements; AEC-Q101  
qualified and PPAP capable.  
SOD882  
Extremely small surface mounting type.  
High Speed.  
2
1
Anode  
Cathode  
High reliability.  
2. Applications  
High speed switching  
3. DEVICE MARKING AND RESISTOR VALUES  
Device  
Marking  
Shipping  
L1SS400BST1G  
L1SS400BST3G  
L1SS400BST5G  
3
3
3
5000/Tape&Reel  
8000/Tape&Reel  
10000/Tape&Reel  
4. MAXIMUM RATINGS(Ta = 25ºC)  
Parameter  
Symbol  
VRM  
VR  
Limits  
90  
Unit  
Peak reverse voltage  
DC reverse voltage  
V
V
80  
IFM  
225  
Peak forward current  
Mean rectifying current  
Surge current (1s)  
mA  
mA  
mA  
IO  
100  
Isurge  
Tj  
500  
125  
Junction temperature  
Storage temperature  
Tstg  
-55~+125  
5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC )  
CHARACTERISTICS  
Symbol  
Min  
Typ  
Max  
Unit  
Forward voltage  
VF  
IR  
V
(IF=100mA)  
-
-
-
-
-
1.2  
0.1  
3
Reverse current  
µA  
pF  
ns  
-
0.72  
-
(VR=80V)  
Capacitance between terminals  
(VR=0.5V,f=1MHz)  
Reverse recovery time  
(VR=6V,IF=10mA,RL=100)  
CT  
Trr  
4
Leshan Radio Company, LTD.  
Rev.C Mar. 2018  
1/3  

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