Datasheet > KXT5551

KXT5551

更新时间： 2024-10-14 11:32:47

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	40K
描述
Surface Mount NPN Silicon Transistor

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中文翻译

获取价格

数据手册

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KXT5551 数据手册

SMD Type

Transistors

Surface Mount NPN Silicon Transistor

KXT5551 ^(CXT5551)

SOT-89

Unit: mm

+0.1

4.50

-0.1

+0.1

1.50

-0.1

+0.1

1.80

-0.1

Features

High current (max. 500mA).

Low voltage (max. 150 V).

+0.1

0.48

-0.1

+0.1

0.53

-0.1

+0.1

0.44

-0.1

1. Base

+0.1

3.00

-0.1

2. Collector

3. Emiitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

VCBO

VCEO

VEBO

Rating

Unit

180

160

Collector current (DC)

power dissipation

600

1.2

104

150

thermal resistance Junction-to-ambient

Junction temperature

Tstg

Storage temperature

-65 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

180

160

6.0

Typ

Max

Unit

Collector to base breakdown voltage

Collector to emitter breakdown voltage

Emitter to base breakdown voltage

VCBO

VCEO

VEBO

IC=100

IC=1.0mA

IE=10

VCB = 120 V, IE = 0

Collector cutoff current

ICBO

VCB = 120 V, TA=100

IC = 1.0 mA; VCE = 5.0 V

IC = 10mA; VCE = 5.0V

IC = 50 mA; VCE = 5.0V

IC = 10 mA; IB = 1.0mA

IC = 50 mA; IB = 5.0mA

IC = 10 mA; IB = 1.0mA

IC = 50 mA; IB = 5.0mA

DC current gain

hFE

250

0.15

0.20

1.00

6.0

Collector to emitter saturation voltage

Base to emitter saturation voltage

VCE(sat)

VBE(sat)

Output capacitance

Transition frequency

Cob

VCB = 10 V, IE = 0,f=1.0MHz

IC = 10 mA; VCE =10V; f = 100 MHz

MHz

100

300

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