Datasheet > KXT5401CXT5401

KXT5401CXT5401

更新时间： 2024-10-14 12:32:43

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
1页	49K
描述
High current (max. 500mA).

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中文翻译

获取价格

数据手册

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KXT5401CXT5401 数据手册

SMD Type

Transistors

Product specification

KXT5401 ^(CXT5401)

SOT-89

Unit: mm

+0.1

-0.1

+0.1

1.50

-0.1

4.50

1.80

+0.1

-0.1

Features

High current (max. 500mA).

Low voltage (max. 150 V).

+0.1

0.48

-0.1

+0.1

0.53

-0.1

+0.1

0.44

-0.1

1. Base

+0.1

-0.1

3.00

2. Collector

3. Emiitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

VCBO

VCEO

VEBO

Rating

Unit

-160

-150

-5

Collector current (DC)

power dissipation

-500

1.2

thermal resistance Junction- to-ambient

Junction temperature

Tstg

104

150

Storage temperature

-65 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

-160

-150

-5.0

Typ

Max

Unit

Collector to base breakdown voltage

Collector to emitter breakdown voltage

Emitter to base breakdown voltage

VCBO

VCEO

VEBO

IC=-100

IC=-1.0mA

IE=-10

VCB =- 120 V, IE = 0

-50

Collector cutoff current

ICBO

VCB =- 120 V, TA=100

IC = -1.0 mA; VCE = -5.0 V

IC = -10mA; VCE =- 5.0V

IC = -50 mA; VCE = -5.0V

IC =- 10 mA; IB = -1.0mA

IC = -50 mA; IB = -5.0mA

IC = -10 mA; IB = -1.0mA

IC = -50 mA; IB =- 5.0mA

DC current gain

hFE

240

-0.2

-0.5

-1.0

6.0

Collector to emitter saturation voltage

Base to emitter saturation voltage

VCE(sat)

VBE(sat)

Output capacitance

Transition frequency

Cob

VCB =-10 V, IE = 0,f=1.0MHz

IC = -10 mA; VCE =-10V; f = 100 MHz

MHz

100

300

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