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KXT5401(CXT5401)

更新时间: 2024-11-18 18:09:23
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描述
PNP Transistor

KXT5401(CXT5401) 数据手册

  
SMD Type  
Transistors  
Surface Mount PNP Silicon Transistor  
KXT5401 (CXT5401)  
SOT-89  
Unit: mm  
+0.1  
4.50  
-0.1  
+0.1  
1.50  
-0.1  
+0.1  
1.80  
-0.1  
Features  
High current (max. 500mA).  
Low voltage (max. 150 V).  
+0.1  
0.48  
-0.1  
+0.1  
0.53  
-0.1  
+0.1  
0.44  
-0.1  
1. Base  
+0.1  
3.00  
-0.1  
2. Collector  
3. Emiitter  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
-160  
-150  
-5  
V
V
Collector current (DC)  
power dissipation  
-500  
1.2  
mA  
W
PD  
thermal resistance Junction- to-ambient  
Junction temperature  
R
JA  
Tj  
Tstg  
104  
150  
/W  
Storage temperature  
-65 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
Min  
-160  
-150  
-5.0  
Typ  
Max  
Unit  
V
Collector to base breakdown voltage  
Collector to emitter breakdown voltage  
Emitter to base breakdown voltage  
VCBO  
VCEO  
VEBO  
IC=-100  
IC=-1.0mA  
IE=-10  
A
V
V
A
VCB =- 120 V, IE = 0  
-50  
-50  
nA  
A
Collector cutoff current  
ICBO  
VCB =- 120 V, TA=100  
IC = -1.0 mA; VCE = -5.0 V  
IC = -10mA; VCE =- 5.0V  
IC = -50 mA; VCE = -5.0V  
IC =- 10 mA; IB = -1.0mA  
IC = -50 mA; IB = -5.0mA  
IC = -10 mA; IB = -1.0mA  
IC = -50 mA; IB =- 5.0mA  
50  
60  
50  
DC current gain  
hFE  
240  
-0.2  
-0.5  
-1.0  
-1.0  
6.0  
V
V
Collector to emitter saturation voltage  
Base to emitter saturation voltage  
VCE(sat)  
VBE(sat)  
V
V
Output capacitance  
Transition frequency  
Cob  
fT  
VCB =-10 V, IE = 0,f=1.0MHz  
IC = -10 mA; VCE =-10V; f = 100 MHz  
pF  
MHz  
100  
300  
1
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