Datasheet > KX6P02

KX6P02

更新时间： 2024-06-27 12:14:11

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	466K
描述
P-Channel MOSFET

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中文翻译

获取价格

数据手册

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KX6P02 数据手册

SMD Type

MOSFET

P-Channel Enhancement MOSFET

KX6P02

SOT-23-3

Unit: mm

+0.2

-0.1

2.9

+0.1

-0.1

0.4

■ Features

● VDS (V) =-20V

● Low ON-resitance:

RD S (O N ) =88.4mΩ (VGS =-1.5V)

R^{D S}(O N ) = 56mΩ (VGS =-1.8V)

RD S (O N ) =39.7mΩ (VGS =-2.5V)

R^{D S (O N )}= 29.8mΩ VGS = -4.5 V)

+0.02

-0.02

+0.1

0.15

0.95

-0.1

+0.1

-0.2

1.9

1. Gate

2. Source

Drain

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

V^DS

V^GS

I^D

Rating

-20

Unit

Gate-Source Voltage

±8

-6.0

-24

Continuous Drain Current

Pulsed Drain Current

I^DM

Power Dissipation

P^D

℃

Power Dissipation t=10s

Junction Temperature

Storage TemperatureRange

T^J

150

T^{st g}

-55 to 150

*1 The channel temperature should not exceed 150°C during use.

*2 PW ≦ 10μs,Duty ≦ 1％

*3 Mounted on a FR4 board.

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