Datasheet > KX6N80F

KX6N80F

更新时间： 2024-06-27 12:11:38

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
6页	3401K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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KX6N80F 数据手册

DIP Type

MOSFET

N-Channel MOSFET

KX6N80F

Unit: mm

TO-220F

±0.20

2.54

8^±0

±0.20

0.70

φ3.

■ Features

● VDS (V) = 800V

● ID = 7 A (VGS = 10V)

● R^DS(ON)＜ 1.9Ω (VGS = 10V)

● Low Gate Charge (Typ. 27 nC)

● Fast switching

±0.20

2.76

1.47max

● 100% Avalanche Tested

±0.20

0.50

±0.20

0.80

2.54typ

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

Unit

800

±30

Gate-Source Voltage

Tc=25℃

Continuous Drain Current

4.2

Tc=100℃

Pulsed Drain Current

Power Dissipation

(Note.1)

Tc=25℃

- Derate above 25°C

0.44

650

16.7

4.5

W/℃

Single Pulsed Avalanche Energy (Note.2)

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

(Note.1)

(Note.3)

dv/dt

V/ns

℃/W

Thermal Resistance.Junction- to-Ambient

Thermal Resistance.Junction- to-Case

Junction Temperature

RthJA

62.5

2.25

150

RthJC

℃

Storage Temperature Range

stg

-55 to 150

Note.1: Repetitive Rating : Pulse width limited by maximum junction temperature

Note.2: L = 25mH, I^AS= 7A, VDD = 50V, R = 25 Ω, Starting T = 25°C

Note.3: I^SD≤ 7A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting T = 25°C

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