Datasheet > KX6N70F

KX6N70F

更新时间： 2024-10-15 18:10:07

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	4290K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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KX6N70F 数据手册

DIP Type

MOSFET

N-Channel Enhancement MOSFET

KX6N70F

Unit: mm

TO-220F

±0.20

2.54

8 ^±0

■ Features

±0.20

0.70

φ3.

● VDS (V) = 700V

● ID = 6.0A (VGS = 10V)

● RDS(ON) ＜ 1.8Ω (VGS = 10V)

● Low gate charge ( typical 16nC)

±0.20

2.76

1.47max

±0.20

0.50

±0.20

0.80

2.54typ

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

700

±30

6.0

Unit

Drain-Source Voltage

Gate-Source Voltage

Tc=25℃

Tc=100℃

Continuous Drain Current

3.6

Pulsed Drain Current

Avalanche Current

(Note.1)

6.0

Repetitive Avalanche Energy (Note.1)

14.7

150

Single Pulsed Avalanche Energy (Note.2)

Tc=25℃

Power Dissipation

0.38

4.5

Derate above 25℃

W/℃

Peak Diode Recovery dv/dt

(Note.3)

dv/dt

V/ns

Thermal Resistance.Junction- to-Ambient

Thermal Resistance.Junction- to-Case

thJA

thJC

62.5

2.6

℃/W

Maximum lead Temperature for soldering purpose,

1/8 from case for 5 seconds

300

℃

Junction Temperature

150

Storage Temperature Range

Tstg

-55 to 150

Note.1: Repetitive Rating :Pulse width limited by maximum junction temperature

Note.2: L=8mH,IAS=6.0A,VDD=50V,R =25Ω,Starting T =25℃

Note.3; ISD≤6.0A,di/dt≤200A/us,VDD≤BVDSS,Starting T =25℃

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