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KX5P04DY PDF预览

KX5P04DY

更新时间: 2024-10-15 18:10:07
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
4页 270K
描述
P-Channel MOSFET

KX5P04DY 数据手册

 浏览型号KX5P04DY的Datasheet PDF文件第2页浏览型号KX5P04DY的Datasheet PDF文件第3页浏览型号KX5P04DY的Datasheet PDF文件第4页 
SMD Type  
MOSFET  
P-Channel MOSFET  
KX5P04DY  
SOP-8  
Unit:mm  
Ƶ Features  
ƽ VDS (V) =-40V  
ƽ ID =-5.3 A (VGS =-10V)  
0.15  
1.50  
ƽ RDS(ON) ˘ 80m¡ (VGS =-10V)  
ƽ RDS(ON) ˘ 120m¡ (VGS =-4.5V)  
ꢅꢁ'UDLQ  
ꢆꢁ'UDLQ  
ꢇꢁ'ꢁDLQ  
ꢈꢁ'UDLQ  
ꢀꢁ6RXUFH  
ꢂꢁ6RXUFH  
ꢃꢁ6RXUFH  
ꢄꢁ*DWH  
Ƶ Absolute Maximum Ratings Ta = 25ć  
Parameter  
Drain-Source Voltage  
Symbol  
Rating  
-40  
Unit  
V
V
DS  
GS  
Gate-Source Voltage  
V
f20  
-5.3  
Continuous Drain Current  
Power Dissipation  
I
D
A
PD  
2
W
Junction Temperature  
T
J
150  
ć
Junction Storage Temperature Range  
T
stg  
-55 to 150  
Ƶ Electrical Characteristics Ta = 25ć  
Parameter  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Body leakage current  
Gate Threshold Voltage  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Unit  
V
V
DSS  
-40  
ID=-250­A, VGS=0V  
I
DSS  
GSS  
V
V
V
V
V
DS=-40V, VGS=0V  
-1  
f100  
-3  
uA  
nA  
V
I
DS=0V, VGS=f20V  
V
GS(th)  
DS=VGS  
GS=-10V, I  
GS=-4.5V, I  
I
D
=-250uA  
=-5A  
=-4A  
-1  
D
80  
Static Drain-Source On-Resistance  
RDS(On)  
m¡  
D
120  
Ƶ Marking  
Marking  
4005  
1
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