Datasheet > KX4N60F

KX4N60F

更新时间： 2024-06-27 12:12:18

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	1766K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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KX4N60F 数据手册

DIP Type

MOSFET

N-Channel MOSFET

KX4N60F

Unit: mm

TO-220F

±0.20

2.54

8^±0

±0.20

0.70

φ3.

■ Features

● VDS (V) = 600V

● I

D = 2.4 A (VGS = 10V)

● R^DS(ON)＜ 2.5Ω (VGS = 10V)

±0.20

2.76

1.47max

±0.20

0.50

±0.20

0.80

2.54typ

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

600

±30

2.4

Unit

Drain-Gate Voltage

Gate-Source Voltage

Ta=25℃

Continuous Drain Current

Pulsed Drain Current

1.5

Ta=100℃

Repetitive and Non-Repetitive Avalanche Current

Power Dissipation

AS,IAR

4.5

Non-Repetitive Avalanche Energy

Repetitive Avalanche Energy

295

Thermal Resistance.Junction- to-Ambient

Thermal Resistance.Junction- to-Case

Junction Temperature

thJA

℃/W

RthJC

3.6

150

-55 to 150

℃

Storage Temperature Range

stg

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