Datasheet > KX4N60

KX4N60

更新时间： 2024-06-27 12:12:35

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	504K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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KX4N60 数据手册

DIP Type

MOSFET

N-Channel MOSFET

KX4N60

TO-220

4.50 0.20

+0.10

9.90 0.20

(8.70)

Ƶ Features

1.30

–0.05

ø3.60 0.10

VDS S = 600V

ID = 4.0 A

Rdson < 2.5വ(Vgs=10V)

Low gate charge

Low Crss (typical 14pF )

Fast switching

1.27 0.10

1.52 0.10

0.80 0.10

100% avalanche tested

Improved dv/dt capability

RoHS product

+0.10

0.50

2.40 0.20

–0.05

2.54TYP

[2.54 0.20 ]

1 GATE

2 DRAIN

3 SOURCE

10.00 0.20

Ƶ Absolute Maximum Ratings (T^C= 25ć)

Parameter

Drain-Source Voltage

Symbol

VDS

Rating

600

Unit

Gate-Source Voltage

VGS

TC = 25ć

TC = 100ć

Continuous Drain Current

2.5

Pulsed Drain Current (Note 1)

Avalanche Current (Note 1)

IDM

IAR

Single Pulse Avalanche Energy (Note 2)

EAS

EAR

dv/dt

240

Repetitive Avalanche energy, tAR limited by Tjmax (Note 1)

Peak Diode Recovery dv/dt (Note 3)

5.5

V/ns

Power Dissipation (TC = 25ć)

100

0.8

Derate above 25°C

Thermal Resistance, Junction- to-Case

Thermal Resistance, Junction- to-Ambient

Junction Temperature

W/ഒ

RthJC

RthJA

1.25

62.5

150

-55 to 150

ഒ/W

Storage Temperature Range

Tstg

Note 1: Pulse width limited by maximum junction temperature

Note 2: L=25mH, IAS=4.0A, VDD=50V, RG=25 വ,Starting TJ=25ć

Note 3: ISD İ4.0A,di/dt İ200A/μs,VDDİBVDSS, Starting TJ=25ć

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