Datasheet > KX4N15DY

KX4N15DY

更新时间： 2024-10-15 18:09:27

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	629K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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KX4N15DY 数据手册

SMD Type

MOSFET

Transistors

N-Channel MOSFET

KX4N15DY

SOP-8

■ Features

● VDS =150V,I

D =5.2A

● R^DS(ON)<44mΩ @ VGS=10V

● High density cell design for ultra low Rdson

0.15

1.50

● Fully characterized avalanche voltage and current

● Low gate to drain charge to reduce switching losses

5 Drain

6 Drain

7 Drain

8 Drain

1 Source

2 Source

3 Source

4 Gate

■ Absolute Maximum Ratings (T

= 25℃, unless otherwise specified)

Parameter

Drain-Source Voltage

Symbol

Rating

150

Unit

VDS

Gate-Source Voltage

±20

5.2

= 25℃

Continuous Drain Current

3.7

= 100℃

Pulsed Drain Current (Note 1)

Power Dissipation

3.5

Thermal Resistance.Junction- to-Case (Note 2)

Junction Temperature

thJC

35.7

150

℃/W

℃

Storage Temperature Range

stg

-55 to 150

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