Datasheet > KX3N80

KX3N80

更新时间： 2024-10-15 18:09:47

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	3231K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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KX3N80 数据手册

DIP Type

MOSFET

N-Channel MOSFET

KX3N80

TO-220

4.50

1.30

± 0.20

9.90

(8.70)

ø3.60 0.10

0.20

+0.10

–0.05

■ Features

● VDS (V) = 800V

● ID = 3 A (VGS = 10V)

● R^DS(ON)＜ 5Ω (VGS = 10V)

● Low gate charge ( typical 15 nC)

● Low Crss ( typical 7.0 pF)

● Fast switching

1.27

0.10

1.52

0.80

0.10

+0.10

–0.05

0.50

2.40

± 0.20

2.54TYP

[2.54 0.20 ]

2.54TYP

[2.54 0.20 ]

1 GATE

2 DRAIN

3 SOURCE

10.00

± 0.20

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

800

±30

Unit

Gate-Source Voltage

Tc=25℃

Continuous Drain Current

1.9

Tc=100℃

Pulsed Drain Current

Avalanche Current

Power Dissipation

Tc=25℃

Derate above 25°C

0.6

120

W/℃

Single Pulsed Avalanche Energy (Note.1)

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

(Note.2)

dv/dt

V/ns

℃/W

Thermal Resistance.Junction- to-Ambient

Thermal Resistance.Junction- to-Case

Thermal Resistance, Case-to-Sink

Junction Temperature

thJA

thJC

thJCS

1.67

0.5 (typ)

150

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

℃

Storage Temperature Range

stg

-55 to 150

Note.1: L = 67mH, IAS = 3A, VDD = 50V, R

= 25 Ω, Starting T

= 25°C

Note.2: I^SD≤ 3A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting T

= 25°C

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