Datasheet > KX20N65V

KX20N65V

更新时间： 2024-10-15 18:09:55

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	625K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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KX20N65V 数据手册

DIP Type

MOSFET

Transistors

N-Channel MOSFET

KX20N65V

Unit:mm

4.83 (max)

TO-220AB

10.53(max)

9.66 (min)

4.07 (min)

1.39 (max)

■ Features

1.15 (min)

● V^{DS (V)}= 650V

● ID = 21A

● R^DS(ON)< 180mΩ

2.79 (max)

2.04 (min)

1.52 (max)

1.15 (min)

0.61 (max)

0.36 (min)

0.96 (max)

0.64 (min)

1. Gate

2. Drain

5.33 (max)

4.83 (min)

2.66 (max)

2.42 (min)

3. Source

■ Absolute Maximum Ratings (T

= 25℃)

Parameter

Drain-Source Voltage

Symbol

Rating

650

Unit

VDS

Gate-Source Voltage

±30

= 25℃

Continuous Drain Current

13.2

= 100℃

Pulsed Drain Current (Note 1)

Avalanche Current (Note 1)

10.5

441

Single Pulse Avalanche Energy (Note 2)

Repetitive Avalanche energy, t^ARlimited by T^jmax(Note 1)

0.7

dv/dt

Drain Source voltage slope, V^DS≤480 V

V/ns

Reverse diode dv/dt，V^DS≤480 V,ISD<I

Power Dissipation (T = 25℃)

188

Derate above 25°C

1.5

W/℃

Thermal Resistance, Junction- to-Case

thJC

thJA

0.66

62.5

150

℃/W

Thermal Resistance, Junction- to-Ambient

Junction Temperature

℃

Storage Temperature Range

stg

-55 to 150

Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature

2. T=25℃,V^DD=50V,V =10V, R =25Ω

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