Datasheet > KUS220N10DA

KUS220N10DA

更新时间： 2024-11-18 17:15:39

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
9页	3302K
描述
DPAK(1)/DPAK(3)

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中文翻译

获取价格

数据手册

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KUS220N10DA 数据手册

SEMICONDUCTOR

KUS220N10DA

TECHNICAL DATA

N-ch Trench MOS FET

General Description

MAIN PARAMETER

This Trench MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and

excellent avalanche characteristics. It is mainly suitable for

DC/DC Converter, Synchronous Rectification and a load switch

in battery powered applications.

V_DSS

100

mΩ

_DS(ON)(Max)@V_GS=10V

I_D

DPAK(1)

DPAK(3)

FEATURES

· Split Gate Trench Technology

· Ultra low on-resistance

· Ultra Low gate charge (typ. Qg=18nC)

· Periodic avalanche rated

· Pb-free lead plating; RoHS compliant

· Qualified according to JEDEC

PIN CONNECTION

· Ideal for high-frequency switching and synchronous rectification

MAXIMUM RATING (T=25 ℃)

CHARACTERISTIC

Drain-Source Voltage

SYMBOL

V_DSS

RATING

100

UNIT

V_GSS

Gate-Source Voltage

± 20

@T_C=25℃

I_D

@T_C=100℃

Drain Current

I_DP

E_AS

Pulsed

(Note1)

(Note2)

(Note1)

(Note3)

120*

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

E_AR

dv/dt

2.1

4.5

V/ns

@T_C=25℃

P_D

Drain Power Dissipation

0.31

150

Derate above 25℃

W/℃

℃

T_j

Maximum Junction Temperature

Storage Temperature Range

T_stg

-55 ~ 150

℃

Thermal Characteristics

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

3.1

@T_C=25℃

@T_A=25℃

℃/W

110

* : Drain current limited by maximum junction temperature.

2023. 09. 25

Revision No : 2

1/9

12 3 4 5 6 7...9

中文翻译

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