Datasheet > KUS220N10D

KUS220N10D

更新时间： 2024-11-18 17:15:39

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
9页	602K
描述
DPAK(1)

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中文翻译

获取价格

数据手册

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KUS220N10D 数据手册

SEMICONDUCTOR

KUS220N10D

TECHNICAL DATA

N-ch Trench MOS FET

MAIN PARAMETER

General Description

V_DSS

This Trench MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for DC/DC

Converter, Synchronous Rectification and a load switch in battery

powered applications.

100

mΩ

R_DS(ON)(Max)@V_GS=10V

I_D

DPAK(1)

DPAK(3)

FEATURES

Split Gate Trench Technology

Ultra low on-resistance

Ultra Low gate charge (typ. Qg=17.0nC)

Periodic avalanche rated

Pb-free lead plating; RoHS compliant

Qualified according to JEDEC

PIN CONNECTION

Ideal for high-frequency switching and synchronous rectification

MAXIMUM RATING(Tc=25

)

CHARACTERISTIC

SYMBOL

V_DSS

RATING

100

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_GSS

@T_C=25

@T_C=100

Pulsed

I_D

Drain Current

I_DP

E_AS

(Note 1)

(Note 2)

120*

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

E_AR

dv/dt

(Note 1)

(Note 3)

2.1

4.5

V/ns

Tc=25

Derate above 25

P_D

Drain Power Dissipation

0.31

150

T_j

Maximum Junction Temperature

Storage Temperature Range

T_stg

-55 ~ 150

Thermal Characteristics

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

3.1

110

* : Drain current limited by maximum junction temperature.

2022. 03. 30

Revision No : 4

1/9

12 3 4 5 6 7...9

中文翻译

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