Datasheet > KUS220N10C

KUS220N10C

更新时间： 2024-11-27 17:15:55

品牌	Logo	应用领域
KEC		光电二极管
页数	文件大小	规格书
8页	554K
描述
PDFN56

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中文翻译

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KUS220N10C 数据手册

KUS220N10C

N-ch Trench MOS FET

SEMICONDUCTOR

TECHNICAL DATA

General Description

This Trench MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for DC/DC Converter,

Synchronous Rectification and a load switch in battery powered

applications

DIM MILLIMETERS

4.9 + 0.1

3.81+0.15/-0.2

6.0 0.1

5.75 0.1

FEATURES

1.0 + 0.1

0.25 + 0.05

· V_DSS= 100V, I_D= 30A

· Drain-Source ON Resistance :

R_DS(ON)=22mΩ (Max.) @V_GS= 10V

3.58 + 0.20

1.1 Min.

1.27 Typ.

0.51 0.1

0.61 0.1

0.13 0.07

0.41+0.1/-0.08

MAXIMUM RATING (Tc=25℃)

CHARACTERISTIC

Drain-Source Voltage

SYMBOL

V_DSS

RATING

100

UNIT

V_GSS

Gate-Source Voltage

±20

@T_C=25℃

PDFN56

I_D

@T_C=100℃

@Ta=25℃

Drain Current

I_DP

Pulsed (Note1)

120

Single Pulsed Avalanche Energy

(Note 2)

E_AS

2.2

4.5

Repetitive Avalanche Energy

(Note 1)

E_AR

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

V/ns

36.7

0.29

W/℃

Tc=25℃

Drain Power

Dissipation

P_D

Derate above 25℃

@Ta=25℃

4.1

T_j

Maximum Junction Temperature

Storage Temperature Range

150

℃

T_stg

-55 ~ 150

℃

Thermal Characteristics

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

3.4

℃/W

Thermal Resistance,

Junction-to-Ambient

30*

* : Surface mounted on 25mm×25mm FR4 Board, t≤ 10 sec.

PIN CONNECTION

2019. 08. 06

Revision No : 0

1/8

12 3 4 5 6 7 8

中文翻译

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