Datasheet > KUS140N10C

KUS140N10C

更新时间： 2024-11-18 17:15:43

品牌	Logo	应用领域
KEC		光电二极管
页数	文件大小	规格书
10页	881K
描述
PDFN56

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中文翻译

获取价格

数据手册

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KUS140N10C 数据手册

SEMICONDUCTOR

KUS140N10C

N-ch Trench MOS FET

TECHNICAL DATA

General Description

This Trench MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for DC/DC

Converter, Synchronous Rectification and a load switch in battery

powered applications

MAIN PARAMETER

V_DSS

100

R_DS(ON)(Max)@V_GS=10V

I_D

FEATURES

PIN CONNECTION

PDFN56

Split Gate Trench Technology

Ultra low on-resistance

Ultra Low gate charge (typ. Qg=26.0nC)

Periodic avalanche rated

Pb-free lead plating; RoHS compliant

Qualified according to JEDEC

Ideal for high-frequency switching and synchronous rectification

MAXIMUM RATING (Tc=25 )

CHARACTERISTIC

Drain-Source Voltage

SYMBOL

V_DSS

RATING

100

UNIT

V_GSS

Gate-Source Voltage

@T_C=25

I_D

@T_C=100

Pulsed

Drain Current

I_DP

E_AS

(Note 1)

(Note 2)

(Note 1)

(Note 3)

175*

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

E_AR

dv/dt

2.7

4.5

Tc=25

P_D

Drain Power Dissipation

0.39

150

Derate above 25

T_j

Maximum Junction Temperature

Storage Temperature Range

T_stg

-55 ~ 150

Thermal Characteristics

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

2.55

30**

* : Drain current limited by maximum junction temperature.

** : Surface mounted on 25 x 25mm FR4 board, t 10s

2020. 10. 12

Revision No : 0

1/10

12 3 4 5 6 7...10

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