Datasheet > KUS086N10FA

KUS086N10FA

更新时间： 2024-09-14 17:15:35

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
9页	630K
描述
TO-220IS(1)

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中文翻译

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数据手册

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KUS086N10FA 数据手册

SEMICONDUCTOR

KUS086N10FA

N-ch Trench MOS FET

TECHNICAL DATA

General Description

MAIN PARAMETER

This Trench MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for DC/DC

Converter, Synchronous Rectification and a load switch in battery

powered applications

V_DSS

100

8.6

mΩ

_DS(ON)(Max)@V_GS=10V

I_D

PIN CONNECTION

TO-220IS(1)

FEATURES

· Split Gate Trench Technology

· Ultra low on-resistance

· Ultra Low gate charge (typ. Qg=54nC)

· Periodic avalanche rated

· Fully isolated package (2500 V_AC: 1 minute)

· Pb-free lead plating; RoHS compliant

· Qualified according to JEDEC

· Ideal for high-frequency switching and synchronous rectification

MAXIMUM RATING (Tc=25℃)

CHARACTERISTIC

Drain-Source Voltage

SYMBOL

V_DSS

RATING

100

UNIT

V_GSS

Gate-Source Voltage

±20

@T_C=25℃

I_D

@T_C=100℃

35.5

220*

Drain Current

I_DP

E_AS

Pulsed

(Note1)

(Note2)

(Note1)

(Note3)

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

E_AR

3.3

dv/dt

4.5

V/ns

Tc=25℃

P_D

Drain Power Dissipation

0.37

150

Derate above 25℃

W/℃

℃

T_j

Maximum Junction Temperature

Storage Temperature Range

T_stg

-55 ~ 150

℃

Thermal Characteristics

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

2.7

℃/W

62.5

* : Drain current limited by maximum junction temperature.

2021. 03. 24

Revision No : 0

1/9

12 3 4 5 6 7...9

中文翻译

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