Datasheet > KU080P03C

KU080P03C

更新时间： 2024-11-18 17:15:43

品牌	Logo	应用领域
KEC		光电二极管
页数	文件大小	规格书
7页	696K
描述
PDFN56

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中文翻译

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KU080P03C 数据手册

KU080P03C

P-ch Trench MOS FET

SEMICONDUCTOR

TECHNICAL DATA

General Description

This Trench MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for load switch and

battery powered applications

DIM MILLIMETERS

4.9 + 0.1

FEATURES

3.81+0.15/-0.2

6.0 0.1

·V_DSS= -30V, I_D= -70A

·Drain-Source ON Resistance :

R_DS(ON)=8mΩ(Max.) @V_GS= -10V

5.75 0.1

1.0 + 0.1

0.25 + 0.05

3.58 + 0.20

1.1 Min.

1.27 Typ.

0.51 0.1

0.61 0.1

MAXIMUM RATING (Tc=25℃)

0.13 0.07

0.41+0.1/-0.08

CHARACTERISTIC

Drain-Source Voltage

SYMBOL

V_DSS

RATING

-30

UNIT

V_GSS

Gate-Source Voltage

±20

-70

@T_C=25℃

I_D

@T_C=100℃

@Ta=25℃

-45

Drain Current

(Note 1)

PDFN56

-16

I_DP

Pulsed (Note4)

-210

Single Pulsed Avalanche Energy

(Note 2)

E_AS

474

7.3

4.5

Repetitive Avalanche Energy

(Note 1,4)

E_AR

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

V/ns

0.64

W/℃

Tc=25℃

Drain Power

Dissipation

P_D

Derate above 25℃

@Ta=25℃

T_j

Maximum Operating Junction Temperature

Storage Temperature Range

150

℃

T_stg

-55 ~ 150

℃

Thermal Characteristics

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

1.56

℃/W

Thermal Resistance,

Junction-to-Ambient

* : Surface mounted on 25mm×25mm FR4 Board, t≤10 sec.

PIN CONNECTION

2023.09.18

Revision No : 1

1/7

12 3 4 5 6 7

中文翻译

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