Datasheet > KTD863

KTD863

更新时间： 2024-01-13 16:59:47

品牌	Logo	应用领域
江苏长电/长晶 - CJ		开关晶体管
页数	文件大小	规格书
1页	110K
描述
Transistor

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中文翻译

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技术参数
数据手册

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KTD863 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.58
Base Number Matches：	1

KTD863 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92L Plastic-Encapsulate Transistors

TO – 92L

KTD863 TRANSISTOR (NPN)

1. EMITTER

2. COLLECTOR

3. BASE

FEATURES

High Voltage

High Current

High Transition Frequency

Wide Area of Safe Operation

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

0.75

167

150

-55~+150

R_θJA

T_j

℃/W

℃

T_stg

Storage Temperature

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= 100µA,I_E=0

I_C=1mA,I_B=0

I_E=100µA,I_C=0

V_CB=50V,I_E=0

μA

Emitter cut-off current

I_EBO

V_EB=4V,I_C=0

h_FE(1)

V_CE=2V, I_C=50mA

V_CE=2V, I_C=1A

320

DC current gain

h_FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector output capacitance

Transition frequency

V_CE(sat)

V_{BE (sat)}

C_ob

I_C=500mA,I_B=50mA

V_CB=10V,I_E=0, f=1MHz

VCE=10V,IC=50mA

0.5

1.2

f_T

150

MHz

CLASSIFICATION OF h_FE(1)

RANK

160-320

RANGE

60-120

100-200

A,Dec,2010

中文翻译

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