生命周期: | Active | 零件包装代码: | TO-3P |
包装说明: | TO-3P(N), 3 PIN | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.34 | Is Samacsys: | N |
最大集电极电流 (IC): | 10 A | 集电极-发射极最大电压: | 120 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 55 |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 80 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 12 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KTD718B | KEC |
获取价格 |
TO-3P(N)-E |
![]() |
KTD863 | KEC |
获取价格 |
EPITAXIAL PLANAR NPN TRANSISTOR (VOLTAGE REGULATOR RELAY RAMP DRIVER, INDUSTRIAL USE) |
![]() |
KTD863 | CJ |
获取价格 |
Transistor |
![]() |
KTD863 | UTC |
获取价格 |
TRIPLE DIFFUSED NPN TRANSISTOR |
![]() |
KTD863 | CJ |
获取价格 |
TO-92L |
![]() |
KTD863_15 | UTC |
获取价格 |
TRIPLE DIFFUSED NPN TRANSISTOR |
![]() |
KTD863G-GR-T9N-B | UTC |
获取价格 |
Small Signal Bipolar Transistor, |
![]() |
KTD863G-O-T9N-B | UTC |
获取价格 |
Small Signal Bipolar Transistor, |
![]() |
KTD863G-O-T9N-K | UTC |
获取价格 |
TRIPLE DIFFUSED NPN TRANSISTOR |
![]() |
KTD863G-X-T9N-B | UTC |
获取价格 |
TRIPLE DIFFUSED NPN TRANSISTOR |
![]() |