SMD Type
Transistors
NPN Transistors
KTC4379
1.70 0.1
■ Features
● Low saturation voltage
● High speed switching time
● Complementary to KTA1666
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Symbol
Rating
Unit
V
VCBO
VCEO
VEBO
50
Collector - Emitter Voltage
Emitter - Base Voltage
50
5
Collector Current - Continuous
I
C
2
500
A
mW
W
Collector Power Dissipation
PC
1
Junction Temperature
T
J
150
℃
Storage Temperature Range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
50
50
5
Ic= 1 mA, I
Ic= 10 mA, I
= 1 mA, I
CB= 50 V , I
EB= 5V , I =0
E= 0
B= 0
I
E
C= 0
I
CBO
EBO
V
V
E= 0
100
100
0.5
nA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
V
CE(sat)
BE(sat)
I
I
C
=1 A, I
B
=50mA
=50mA
V
C
=1 A, I
B
1.2
V
V
CE= 2V, I
CE= 2V, I
C
= 500mA
= 1.5 A
70
40
240
DC current gain
hFE
C
Turn on Time
t
on
0.1
1
V
CC=30V, I
C=1A, IB1=-IB2=-0.05A
us
Storage Time
t
stg
Fall Time
t
f
0.1
30
Collector output capacitance
Transition frequency
Cob
T
V
V
CB= 10V, I
E
= 0,f=1MHz
pF
f
CE= 2V, I
C= 500mA
120
MHz
■ Classification of hfe(1)
Type
Range
Marking
KTC4379-O
70-140
UO
KTC4379-Y
120-240
UY
1
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