Datasheet > KTC3880S

KTC3880S

更新时间： 2024-11-02 14:54:31

品牌	Logo	应用领域
鲁光 - LGE		放大器光电二极管双极型晶体管
页数	文件大小	规格书
2页	1069K
描述
双极型晶体管

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中文翻译

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技术参数
数据手册

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KTC3880S 技术参数

极性：	NPN	Collector-emitter breakdown voltage：	30
Collector Current - Continuous：	0.02	DC current gain - Min：	40
DC current gain - Max：	240	Transition frequency：	500
Package：	SOT-23	Storage Temperature Range：	-55-150
class：	Transistors

KTC3880S 数据手册

KTC3880S

NPN Silicon Epitaxial Planar Transistor

SOT-23

Min

Dim

Max

3.10

1.50

FEATURES

2.70

Small reverse transfer capacitance.

1.10

1.0 Typical

0.4 Typical

Low noise figure.

0.35

0.48

2.00

0.1

APPLICATIONS

1.80

0.02

High frequency Low noise amplifier application.

0.1 Typical

VHF band amplifier application.

2.20

2.60

All Dimensions in mm

ORDERING INFORMATION

Type No.

Marking

Package Code

SOT-23

KTC3880S

AQR/AQO/AQY

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

Collector-Base Voltage

V_CBO

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

Collector Current

℃

Emitter Current

I_E

-20

Collector Power Dissipation

Junction and Storage Temperature

P_C

150

T_j,T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN

TYP MAX UNIT

Collector cut-off current

Emitter cut-off current

DC current gain

I_CBO

I_EBO

h_FE

f_T

V_CB=18V,I_E=0

V_EB=4V,I_C=0

0.5

200

μA

V_CE=6V,I_C=1mA

V_CE=6V, I_C= 1mA

Transition frequency

Reverse Transfer Capacitance

300

550

0.7

MHz

V_CB=6V,I_E=0,f=1MHz

C_re

V_CB=6V,I_E=-1mA

f=30MHz

Collector-Base Time Constant

C_C.rbb

Noise figure

Power Gain

2.5

5.0

V_CC=6V,I_E=-1mA,

f=100KHz

G_pe

CLASSIFICATION OF h_FE

Rank

Range

Marking

40-80

AQR

70-140

AQO

100-200

AQY

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

中文翻译

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