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KTC3880S PDF预览

KTC3880S

更新时间: 2024-11-01 11:32:15
品牌 Logo 应用领域
江苏长电/长晶 - CJ 晶体晶体管光电二极管放大器
页数 文件大小 规格书
1页 38K
描述
TRANSISTOR (NPN)

KTC3880S 数据手册

  
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
SOT-23 Plastic-Encapsulate Transistors  
SOT-23  
1. BASE  
KTC3880S TRANSISTOR (NPN)  
2. EMITTER  
3. COLLECTOR  
FEATURES  
Power dissipation  
2. 4  
1. 3  
PCM:  
150  
mW (Tamb=25)  
Collector current  
ICM:  
20  
40  
mA  
V
Collector-base voltage  
V(BR)CBO  
:
Operating and storage junction temperature range  
Unit: mm  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS( Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic=100µA, IE=0  
Ic=1mA, IB=0  
MIN  
40  
30  
4
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
Emitter cut-off current  
V
V
IE=100µA, IC=0  
µA  
µA  
VCB=18V, IE=0  
0.5  
0.5  
200  
IEBO  
VEB=4V, IC=0  
hFE(1)  
DC current gain  
VCE=6V, IC=1mA  
40  
MHz  
pF  
Transition frequency  
fT  
VCE=6V, IC=1mA  
500  
1
Cob  
Collector output capacitance  
Noise figure  
V
CB=6V, IE=0, f=1MHz  
NF  
5
dB  
V
CE=6V, Ic=1mA, f=100MHZ  
CLASSIFICATION OF hFE(1)  
Rank  
R
O
Y
Range  
40-80  
70-140  
AQO  
100-200  
Marking  
AQR  
AQY  

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