Datasheet > KTC3876O

KTC3876O

更新时间： 2024-01-12 21:16:56

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
1页	872K
描述
Transistor

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技术参数
数据手册

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KTC3876O 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.6
Is Samacsys：	N	Base Number Matches：	1

KTC3876O 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

SOT-23

KTC3876

TRANSISTOR (NPN)

FEATURES

· High hFE

1. BASE

· Complementary to KTA1505

2. EMITTER

3. COLLECTOR

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

500

200

150

-55-150

℃

P_C

T_j

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

I_C=100μA, I_E=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

V_(BR)CEOI_C= 1mA, I_B=0

V_(BR)EBO

I_CBO

I_E= 100μA, I_C=0

V_CB= 35V, I_E=0

V_EB= 5V, I_C=0

0.1

μA

Emitter cut-off current

I_EBO

h_FE1

V_CE=1V, I_C= 100mA

400

DC current gain

V_CE=6V, I_C= 400mA

h_FE2

Collector-emitter saturation voltage

base-emitter voltage

V_CE(sat)

V_BE

f_T

I_C=100mA, I_B= 10mA

V_CE=1V, I_B= 100mA

V_CE=6V, I_C=20mA

V_CB=6V,I_E=0,f=1MH_Z

0.25

Transition frequency

300

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

GR(G)

Rank

70-140

120-240

200-400

Range

Marking

A,May,2011

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