Datasheet > KTC3876-Y-TP-HF

KTC3876-Y-TP-HF

更新时间： 2023-02-26 13:56:23

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
2页	773K
描述
Small Signal Bipolar Transistor,

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中文翻译

获取价格

数据手册

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KTC3876-Y-TP-HF 数据手册

M C C

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KTC3876-Y

KTC3876-GR

Micro Commercial Components

Features

•

High h_FEand Low Noise

Epitaxial Planar

NPN Transistors

Complementary to KTA1505

Lead Free Finish/Rohs Compliant ("P"Suffix designates

RoHS Compliant. See ordering information)

Halogen free available upon request by adding suffix "-HF"

Epoxy meets UL 94 V-0 flammability rating

Moisture Sensitivity Level 1

•

SOT-23

Maximum Ratings

Symbol

V_CEO

V_CBO

V_EBO

I_C

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Rating

Unit

5.0

℃

500

P_C

Collector power dissipation

Junction Temperature

200

T_J

-55 to +150

T_STG

Storage Temperature

-55 to +150

℃

Electrical Characteristics @ 25^OC Unless Otherwise Specified

DIMENSIONS

Symbol

Parameter

Min

Typ

Max

Units

INCHES

MIN

OFF CHARACTERISTICS

DIM

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

NOTE

I_CBO

Collector-Base Cutoff Current

---

0.1

uAdc

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

(V_CB=35Vdc,I_E=0)

Emitter-Base Cutoff Current

(V_EB=5.0Vdc, I_C=0)

I_EBO

ON CHARACTERISTICS

h_FE

DC Current gain⁽¹⁾

.085

.37

(I_C=100mAdc, V_CE=1.0Vdc)

120

---

400

---

V_CE(sat)

V_BE

f_T

Collector-Emitter Saturation Voltage

(I_C=100mAdc, I_B=10mAdc)

Base-Emitter Voltage

---

0.25

Vdc

Suggested Solder

Pad Layout

---

300

2.0

1.0

---

Vdc

MHz

(V_CE=1.0Vdc,I_B=100mAdc)

Transistor Frequency

.031

.800

(V_CE=6Vdc, I_C=20mAdc)

.035

.900

C_ob

Collector Output Capacitance

3.5

(V_CB=6Vdc, I_E=0, f=1.0MHz)

.079

2.000

inches

(1) h_FEClassification Y: 120~240(Marking: WY),

GR: 200~400(Marking: WG)

.037

.950

.037

.950

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Revision: A

2015/01/09

中文翻译

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