Datasheet > KTC3467-O

KTC3467-O

更新时间： 2024-11-21 01:11:47

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1347K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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KTC3467-O 数据手册

DIP Type

Transistors

NPN Transistors

KTC3467

TO-92L

Unit:mm

4.9 ± 0.2

0.7 ±0.1

■ Features

0.45 ±0.1

● High Voltage and High fT

● Low Collector Output Capacitance

● Complementary to KTA1070

1.27

2.54 ±0.1

1.60 ^(max)

Emitter

2.Collector

3.Base

4.0(min)

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

200

Unit

VCBO

VCEO

VEBO

200

Collector Current - Continuous

Collector Current - Pulse

Collector Power Dissipation

Junction Temperature

100

200

150

℃

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= 100uA， I = 0

Ic= 1 mA，I =0

= 100uA， I = 0

CB= 150V , I = 0

Min

200

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

EBO

0.1

0.6

EB= 4V , I

=20mA, I

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=2mA

C=20mA, I

hFE

CE= 5V, I

=10mA

240

Reverse transfer capassification

Collector output capacitance

Transition frequency

Cre

CB= 30V,f=1MHz

1.2

1.7

150

^CE= 30V, I

C= 10mA

MHz

■ Classification of hfe

Type

KTC3467-O

KTC3467-Y

120-240

Range

70-140

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