Datasheet > KTC3195R

KTC3195R

更新时间： 2024-11-23 14:43:07

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
1页	291K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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KTC3195R 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

KTC3195R 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92S Plastic-Encapsulate Transistors

KTC3195 TRANSISTOR (NPN)

TO-92S

FEATURES

Small reverse transfer capacitance

Low noise Figure

1. EMITTER

2. COLLECTOR

3. BASE

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

Unit

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

℃

P_C

400

150

-55-150

T_J

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

V_(BR)CBOI_C=100μA, I_E=0

V_(BR)CEOI_C=1mA, I_B=0

V_(BR)EBOI_E=100μA, I_C=0

I_CBO

I_EBO

h_FE

f_T

V_CB=40V, I_E=0

V_EB=4V, I_C=0

0.5

200

μA

V_CE=6V, I_C=1mA

Transition frequency

300

550

0.7

2.5

MHz

Reverse Transfer capacitance

Noise figure

C_re

G_pe

V_CB=6V, I_E=0, f=1MHz

V_CE=6V, I_C=1mA,f=100MHZ

Power Gain

CLASSIFICATION OF h_FE

Rank

40-80

70-140

100-200

Range

A,Jun,2011

中文翻译

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