Datasheet > KTC2874_03

KTC2874_03

更新时间： 2024-01-30 17:43:27

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
3页	403K
描述
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE

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中文翻译

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数据手册

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KTC2874_03 数据手册

KTC2874

SEMICONDUCTOR

SILICON NPN TRANSISTOR

EPITAXIAL PLANAR TYPE

TECHNICAL DATA

FOR MUTING AND SWITCHING APPLICATION.

FEATURES

High Emitter-Base Voltage : V_EBO=25V(Min.)

High Reverse h_FE

: Reverse h_FE=150(Typ.) (V_CE=-2V, I_C=-4mA)

Low on Resistance : R_ON=1 (Typ.), (I_B=5mA)

DIM MILLIMETERS

4.7 MAX

5.1 MAX

4.1 MAX

0.45

0.55 MAX

0.8

1.8

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

12.7 MIN

1.27

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

UNIT

0.45

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

1. EMITTER

2. COLLECTOR

3. BASE

300

I_B

Base Current

P_C

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

625

TO-92

T_j

150

T_stg

-55 150

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

SYMBOL

I_CBO

TEST CONDITION

MIN.

TYP.

MAX.

0.1

1200

0.1

UNIT

V_CB=50V, I_E=0

I_EBO

V_EB=25V, I_C=0

h_FE

V_CE=2V, I_C=4mA

I_C=30mA, I_B=3mA

V_CE=2V, I_C=4mA

V_CE=6V, I_C=4mA

V_CB=10V, I_E=0, f=1MHz

DC Current Gain (Note)

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

200

V_CE(sat)

V_BE

f_T

0.042

0.61

MHz

Transition Frequency

C_ob

Collector Output Capacitance

4.8

OUTPUT

t_ON

t_stg

t_f

Turn-on Time

160

500

130

4kΩ

INPUT

Switching

Storage Time

Time

10V

1µs

DUTY CYCLE 2%

=12V

Fall Time

=-3V

*Note) : h_FEClassification A:200~700, B: 350 1200

2003. 6. 30

Revision No : 4

1/3

12 3

中文翻译

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