Datasheet > KTC2814_03

KTC2814_03

更新时间： 2024-01-23 13:02:05

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
3页	403K
描述
EPITAXIAL PLANAR NPN TRANSISTOR

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中文翻译

获取价格

数据手册

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KTC2814_03 数据手册

SEMICONDUCTOR

KTC2814

EPITAXIAL PLANAR NPN TRANSISTOR

TECHNICAL DATA

POWER AMPLIFIER APPLICATION.

POWER SWITCHING APPLICATION.

FEATURES

Low Collector Saturation Voltage

: V_CE(sat)=0.5V(Max.) (I_C=1A)

High Speed Switching Time : t_stg=1.0 S(Typ.)

Complementary to KTA1715.

DIM MILLIMETERS

8.3 MAX

5.8

0.7

Φ3.2 0.1

3.5

11.0 0.3

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

2.9 MAX

1.0 MAX

1.9 MAX

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

UNIT

0.75 0.15

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

15.50 0.5

2.3 0.1

0.65 0.15

1.6

1. EMITTER

2. COLLECTOR

3. BASE

3.4 MAX

-2

I_E

Emitter Current

TO-126

1.5

Ta=25

Tc=25

Collector Power

Dissipation

P_C

T_j

Junction Temperature

150

T_stg

Storage Temperature Range

-55 150

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Collector Cut-off Current

SYMBOL

I_CBO

I_EBO

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

V_CB=50V, I_E=0

0.1

V_EB=5V, I_C=0

I_C=10mA, I_B=0

Emitter Cut-off Current

V_(BR)CEO

Collector-Emitter Breakdown Voltage

h_FE(1) (Note) V_CE=2V, I_C=0.5A

240

DC Current Gain

h_FE

V_CE=2V, I_C=1.5A

I_C=1A, I_B=0.05A

V_CE(sat)

V_BE(sat)

f_T

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition Frequency

0.5

1.2

I_C=1A, I_B=0.05A

V_CE=2V, I_C=0.5A

V_CB=10V, I_E=0, f=1MHz

100

MHz

C_ob

Collector Output Capacitance

OUTPUT

t_on

t_stg

t_f

Turn On Time

0.1

1.0

0.1

20µsec

INPUT

Switching

Storage Time

Time

=-I =-0.05A

Fall Time

=30V

DUTY CYCLE 1%

Note : h_FEClassification O:70 140, Y:120 240

2003. 7. 24

Revision No : 3

1/3

12 3

中文翻译

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