Datasheet > KTC2316

KTC2316

更新时间： 2024-11-18 03:48:55

品牌	Logo	应用领域
江苏长电/长晶 - CJ		晶体晶体管
页数	文件大小	规格书
1页	30K
描述
TRANSISTOR (NPN)

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中文翻译

获取价格

数据手册

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KTC2316 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92L Plastic-Encapsulate Transistors

TO-92L

KTC2316 TRANSISTOR (NPN)

1. EMITTER

2. COLLECTOR

3. BASE

FEATURES

Power dissipation

P_CM:

0.9

W (Tamb=25℃)

Collector current

I_CM:

0.8

Collector-base voltage

V_(BR)CBO

120

1 2 3

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=1mA, I_E=0

MIN

120

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Ic=10mA, I_B=0

I_E=1mA, I_C=0

µA

V_CB=120V, I_E=0

0.1

I_EBO

Emitter cut-off current

V_EB=4V, I_C=0

h_FE(1)

_CE=5V, I_C=10mA

DC current gain

h_FE(2)

V_CE=5V, I_C=100mA

240

V_CE(sat)

Collector-emitter saturation voltage

Transition frequency

I_C=500mA, I_B=50mA

V_CE=5V, I_C=100mA

MHz

f_T

120

C_ob

Collector output capacitance

V_CB=10V, I_E=0, f=1MHz

CLASSIFICATION OF h_FE(1)

Rank

80-160

120-240

Range

Marking

中文翻译

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