DIP Type
Transistors
NPN Transistors
KTC2238A
TO-220
4.50
1.30
± 0.20
9.90
(8.70)
ø3.60 0.10
±
0.20
+0.10
–0.05
±
■ Features
● High Transition Frequency
● Complementary to KTA968A
1.27
±
0.10
1.52
0.80
±
0.10
0.10
2
3
1
±
+0.10
–0.05
0.50
2.40
± 0.20
2.54TYP
[2.54 0.20 ]
2.54TYP
[2.54 0.20 ]
±
±
1. Base
2. Collector
3. Emitter
10.00
± 0.20
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Symbol
Rating
180
Unit
V
VCBO
VCEO
VEBO
Collector - Emitter Voltage
Emitter - Base Voltage
180
5
Collector Current - Continuous
I
C
1.5
A
P
C
25
W
Collector Power Dissipation
Junction Temperature
Tc= 25℃
T
J
150
℃
Storage Temperature Range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
180
180
5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= 1 mA, I
Ic= 10 mA,I
= 1 mA, I
E= 0
B=0
I
E
C= 0
I
CBO
EBO
V
V
CB= 180 V , I
E= 0
1
1
uA
V
I
EB= 5V , I =0
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
V
CE(sat)
BE(sat)
I
I
C
=500mA, I
B
=500mA
=500mA
1.5
1.2
1
V
C
=500mA, I
B
V
BE
V
V
V
V
CE= 5V, I
CE= 5V, I
C
=500mA
=100mA
DC current gain
hFE
C
70
240
Collector output capacitance
Transition frequency
C
ob
T
CB= 10V, I
CE= 10V, I
E
= 0,f=1MHz
25
pF
f
C
= 100mA
100
MHz
■ Classification of hfe
Type
KTC2238A-O
KTC2238A-Y
120-240
Range
70-240
1
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