SEMICONDUCTOR
KTA1505S
EPITAXIAL PLANAR PNP TRANSISTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
L
B
L
FEATURES
DIM MILLIMETERS
ᴌExcellent hFE Linearity
_
+
2.93 0.20
A
B
C
D
E
G
H
J
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
: hFE(2)=25(Min.) at VCE=-6V, IC=-400mA.
ᴌComplementary to KTC3876S.
2
3
1
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
K
L
P
P
MAXIMUM RATING (Ta=25ᴱ)
M
N
P
0.20 MIN
1.00+0.20/-0.10
7
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
-35
UNIT
V
M
-30
V
1. EMITTER
2. BASE
-5
V
3. COLLECTOR
-500
-50
mA
mA
mW
ᴱ
IB
Base Current
PC
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
150
SOT-23
Tj
150
Tstg
-55ᴕ150
ᴱ
Marking
h
Rank
FE
Lot No.
Type Name
AZ
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL
ICBO
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
ỌA
VCB=-35V, IE=0
Collector Cut-off Current
IEBO
-
-
-
-
-0.1
-0.1
400
-
VEB=-5V, IC=0
Emitter Cut-off Current
DC Current Gain (Note)
ỌA
hFE(1)
hFE(2)
VCE(sat)
VBE
VCE=-1V, IC=-100mA
VCE=-6V, IC=-400mA
IC=-100mA, IB=-10mA
VCE=-1V, IC=-100mA
VCE=-6V, IC=-20mA
VCB=-6V, IE=0, f=1MHz
70
25
-
-
-
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
-0.1
-0.8
200
13
-0.25
-1.0
-
V
V
-
fT
Transition Frequency
-
MHz
pF
Cob
Collector Output Capacitance
-
-
(Note) : hFE(1) Classification O:70ᴕ140 Y:120ᴕ240 GR:200ᴕ400
hFE(2) Classification
O:25Min. Y:40Min.
2001. 2. 24
Revision No : 3
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