SEMICONDUCTOR
KTA1040D/L
EPITAXIAL PLANAR PNP TRANSISTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
DPAK FOR SVRFACE MOUNT APPLICATIONS.
A
C
I
J
FEATURES
DIM MILLIMETERS
_
6.60+0.2
_
6.10+0.2
_
5.0+0.2
_
1.10+0.2
_
2.70+0.2
_
2.30+0.1
A
B
C
D
E
F
Low Collector Saturation Voltage
: VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A.
Straight Lead (IPAK, "L" Suffix)
Complementary to KTC2020D/L.
H
I
1.00 MAX
_
2.30+0.2
_
0.5+0.1
_
2.00+0.20
_
0.50+0.10
_
0.91+ 0.10
_
0.90+0.1
_
1.00+0.10
J
H
K
L
M
O
P
P
F
L
F
1
2
3
Q
0.95 MAX
1. BASE
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
2. COLLECTOR
3. EMITTER
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
-60
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DPAK
-60
V
-7
V
-3
A
A
C
I
J
IB
Base Current
-0.5
1.0
A
Ta=25
Tc=25
Collector Power
Dissipation
DIM MILLIMETERS
PC
W
_
6.60 0.2
+
_
6.10 0.2
+
A
B
C
D
E
F
20
_
+
5.0 0.2
_
1.10
9.50
2.30
0.76
+
0.2
0.6
0.1
0.1
P
H
G
Tj
_
+
_
+
_
+
Junction Temperature
150
G
H
I
Tstg
Storage Temperature Range
-55 150
1.0 MAX
_
2.30+0.2
_
0.5 0.1
+
_
2.0 0.2
+
J
F
F
L
K
L
P
_
+
0.50 0.1
_
+
0.1
1.0
0.90 MAX
1
2
3
Q
1. BASE
2. COLLECTOR
3. EMITTER
IPAK
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Collector Cut-off Current
SYMBOL
ICBO
TEST CONDITION
MIN.
TYP.
MAX.
-100
-100
-
UNIT
VCB=-60V, IE=0
VEB=-7V, IC=0
IC=-50mA, IB=0
-
-
-
A
A
IEBO
Emitter Cut-off Current
-
-
V(BR)CEO
Collector-Emitter Breakdown Voltage
-60
100
20
-
V
hFE(1)(Note) VCE=-5V, IC=-0.5A
-
300
-
DC Current Gain
hFE(2)
VCE(sat)
VBE
VCE=-5V, IC=-3A
-
IC=-2A, IB=-0.2A
Collector Emitter Saturation Voltage
Base-Emitter Voltage
-0.25
-0.7
30
45
-1.0
-1.0
-
V
V
VCE=-5V, IC=-0.5A
VCE=-5V, IC=-0.5A
VCB=-10V, IE=0, f=1MHz
-
fT
Transition Frequency
-
MHz
pF
Cob
Collector Output Capacitance
-
-
OUTPUT
ton
tstg
tf
Turn-on Time
-
-
-
0.4
1.7
0.5
-
-
-
I
B2
INPUT
I
I
B1
0
I
B1
15Ω
Storage Time
Fall Time
Switching Time
S
B2
20µsec
-I =I =0.2A
B2
B1
<
DUTY CYCLE 1%
V
CC
=-30V
=
Note : hFE(1) Classification
2003. 3. 27
Y:100~200, GR:150~300.
Revision No : 5
1/2