DIP Type
Transistors
PNP Transistors
KTA1021
TO-92M
Unit:mm
6.0 ± 0.2
■ Features
● Excellent hFE Linearity
● 1 Watt Amplifier Application
● Complementary to KTC1020
1.0 ±0.1
0.50 ±0.1
2
1
3
1.50
3.0 ±0.1
1.60 (max)
Emitter
1.
2.Collector
3.Base
4.0(min)
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
Unit
V
VCBO
VCEO
VEBO
-35
-30
-5
Collector Current - Continuous
Base Current
I
C
-500
-100
400
mA
mW
℃
I
B
Collector Power Dissipation
Junction Temperature
PC
T
J
150
Storage Temperature range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
-35
-30
-5
Ic= -100 uA, I
Ic= -1mA, I =0
= -100uA, I =0
CB= -35 V , I =0
EB= -5V , I =0
E=0
B
I
E
C
I
CBO
EBO
V
V
E
-100
-100
-0.25
-1.2
-1
nA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
V
CE(sat)
BE(sat)
I
C
=-100 mA, I
B
=-10mA
=-10mA
V
I
C=-100 mA, I
B
V
BE
V
V
V
V
CE= -1V, I
CE= -1V, I
CB= -6V, I
CE= -6V, I
C
= -100 mA
= -100mA
DC current gain
hFE
C
100
240
Collector output capacitance
Transition frequency
C
ob
T
E= 0,f=1MHz
13
pF
f
C= -20mA
200
MHz
■ Classification of hfe
Type
KTA1021-O
KTA1021-Y
120-240
Range
100-200
1
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