Datasheet > KST9013-L

KST9013-L

更新时间： 2024-10-03 01:08:15

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	1054K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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KST9013-L 数据手册

SMD Type

TransistIoCrs

NPN Transistors

KST9013

SOT-23-3

Unit: mm

+0.2

-0.1

2.9

0.4

+0.1

-0.1

Features

Excellent hFE linearity

Collector Current :IC=0.5A

+0.02

-0.02

+0.1

-0.1

0.15

0.95

+0.1

-0.2

1.9

1. Base

2. Emitter

3. Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

500

P^C

300

T^j

150

Storage Temperature

Tstg

-55 to 150

Electrical Characteristics Ta = 25

Parameter

Symbol

V^CBO

V^CEO

V^EBO

I^CBO

Testconditions

Min

Typ

Max

Unit

Collector - base breakdown voltage

Collector - emitter breakdown voltage

Emitter - base breakdown voltage

Collector cut - off current

Ic= 100

Ic= 0.1mA IB=0

IE=100 IC=0

IE=0

VCB=40 V , IE=0

0.1

Collector cut -off current

I^CEO

VCE=20V , IB=0

Emitter cut - off current

I^EBO

VEB= 5V , IC=0

0.1

400

V^CE=1V, IC= 50mA

V^CE=1V, IC=500mA

IC=500 mA, IB= 50mA

120

DC current gain

h^FE

Collector - emitter saturation voltage

Base - emitter saturation voltage

Transition frequency

V^CE(sat)

V^BE(sat)

f^T

0.6

1.2

VCE=6V, IC= 20mA,f=30MHz

150

MHz

■ Classification of hfe(1)

Type

Range

Marking

KST9013

200-350

KST9013-L

120-200

KST9013-H

144-202

KST9013-J

300-400

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